Power diode:Structure and principle simple,Reliable work。
Thyristor:Under the highest voltage and current capacity in all devices。
IGBT:High switching speed,Switch loss,Ability to resistance,Tong-state pressure drop,Input impedance high,Voltage drive,Small drive power;Disadvantage:Switch speed is lower than electricityMOSFET,Voltage,Current capacity is BALMUDA烤箱故障代码 not as good asGTO。
GTR:High withstand,Large current,Good switch characteristics,Tongflow capacity,Saturated pressure reduction;Disadvantage:Low switching speed,Current drive,The required driver power is large,Drive circuit complex,Double breakdown problem。
GTO:Voltage、Current capacity,Suitable for high-power occasions,Conductive modulation effect,His flow capacity is very strong;Disadvantage:Current shutdown gain is small,Turn off the door negative pulse current,Low switching speed,Drive power,Drive circuit complex,Low switching frequency。
MOSFET:Switch speed,Input impedance high,Good thermal stability,The required driver power is small and the drive circuit is simple.,High working frequency,There is no second breakdown problem;Disadvantage:Small current capacity,Low withstand voltage,Generally only applicable。
以上就是巴慕达中国维修常用了,更多BALMUDA巴慕达电器资讯尽在日本BALMUDA巴慕达加湿器维修电话_BALMUDA电风扇售后服务。
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